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TAWARAN TEKNIK
Method Of Growing Semipolar Gallium Nitride Film
TINJAUAN TEKNOLOGI
A method of growing semipolar GaN on m-plane sapphire substrate using metalorganic chemical vapor deposition (MOCVD) is described. A suitable m-plane Al2O3 is used as substrate. Nitridation of substrate is performed at growth temperature with gaseous H2 and NH3 flow. After a desired time has elapsed, growth of planar m-plane GaN layer on the substrate is performed with gaseous (Ga(CH3)3), H2 and NH3 flow. Semipolar m-plane GaN is grown on the substrate. The surface morphology of semipolar GaN has improved as captured by atomic force microscope and scanning electron microscope.
Orang yang boleh dihubungi untuk tawaran ini:
Lee Ching Shya
Pegawai Perniagaan UMCIC Universiti Malaya
e-mel: leecs@um.edu.my
Tel: +603-7967-7351/7352
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